Work

High-Temperature Device Model for GaN-based MIS-HEMTs

Year: 2025

Type: conference-paper

Source: IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)

DOI: 10.1109/wipda-asia63772.2025.11184006

Authors: Hanlin Cao, Pingyu Cao, Sang Lam, Miao Cui

Institution: Xi’an Jiaotong-Liverpool University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: closed

OpenAlex ID: W4414908905

FWCI:

Cites: 12

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