Work

A Synchronously Implanted Termination for 1200V SiC Trench-Gate MOSFET

Year: 2025

Type: conference-paper

Source: IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)

DOI: 10.1109/wipda-asia63772.2025.11183917

Authors: Zhengyun Zhu, Jian Luo, Kai Huang, Qian Wang, Mingyang Gao, Aoxue Xu, Liang Zhou

Institutions: NARI Group (China), Zhejiang University

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4414908933

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Cites: 9

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