Work

Study of a High-Sensitivity Recessed-Anode GaN MIS Diode for Temperature Sensing

Year: 2025

Type: conference-paper

Source: IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)

DOI: 10.1109/wipda-asia63772.2025.11183968

Authors: Yunxuan Zhao, Xi Jiang, Song Yuan, Zhaoheng Yan, Yanzuo Li, Chaofan Deng, Xiangdong Li, Xiaowu Gong

Institutions: Xidian University, Guangzhou Institute of Technology

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: Young Scientists Fund

OpenAlex ID: W4414908968

FWCI:

Cites: 11

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