Investigation of the Threshold Voltage Drift in Trench-Type 1200V SiC MOSFETs Under Bipolar Dynamic Gate Stress
Year: 2025
Type: conference-paper
Authors: Jiaying Cao, Hao Guan, Jiuyang Tang, Liudan Kong, Yifei Chang, Yuhan Duan, Qingchun Zhang, Pan Liu
Institution: Fudan University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W4414908998