Work

Development of A Novel Analytical Trapped Charge Model for Total Ionizing Dose Effects of SiC MOSFETs

Year: 2025

Type: conference-paper

Source: IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)

DOI: 10.1109/wipda-asia63772.2025.11183991

Authors: Qingmao Hu, Xin Yang, Qingzhong Gui

Institution: Hunan University

Language: English

Topic: Radiation Effects in Electronics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

OpenAlex ID: W4414909069

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Cites: 23

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