Work

A Novel Zero-Pressure Packaging Structure of High-Voltage SiC IGBT Device

Year: 2025

Type: conference-paper

Source: IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)

DOI: 10.1109/wipda-asia63772.2025.11183911

Authors: Tang Xinling, Wangliang, Du Yujie, Wei Xiaoguang

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

Funder: Nova

OpenAlex ID: W4414909072

FWCI: 4.717

Cites: 7

Cited by: 2

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