Work

Analysis and Prediction Method of Gate Voltage Peak in Switching Transient of GaN E-HEMT

Year: 2025

Type: conference-paper

Source: IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)

DOI: 10.1109/wipda-asia63772.2025.11183902

Authors: Yushan Liu, Yirui Hu, Xiao Li

Institution: Beihang University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Chunhui Project Foundation of the Education Department of China

OpenAlex ID: W4414909285

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Cites: 14

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