Work

An Active Gate Driver Addressing GaN HEMT Gate-Source Voltage Overshoots for Both Turn-on and Turn-off Periods

Year: 2025

Type: conference-paper

Source: IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)

DOI: 10.1109/wipda-asia63772.2025.11184066

Authors: Lurenhang Wang, Yishun Yan, Shuaiqing Zhi, Mingcheng Ma, Xizhi Sun, Dianguo Xu

Institution: Harbin Institute of Technology

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4414909293

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Cites: 15

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