Work

A Novel Analytical Physical Model of Gate-drain Capacitance and Output Characteristics for SiC-MOSFET

Year: 2025

Type: conference-paper

Source: IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)

DOI: 10.1109/wipda-asia63772.2025.11183980

Authors: Ze Tao, Zenan Shi, Yifei Luo, Xin Li

Institutions: Naval University of Engineering, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4414909294

FWCI: 2.3

Cites: 6

Cited by: 1

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