Work

A Dual-Voltage 650 V and 100 V GaN Integrated Platform Featuring High-Performance Monolithic Components

Year: 2025

Type: conference-paper

Source: IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)

DOI: 10.1109/wipda-asia63772.2025.11183708

Authors: Yanlin Wu, Junye Wu, Zuoheng Jiang, Danfeng Mao, Keping Wu, Chao Feng, Jiawei Chen, David Zhou, Yuxi Wan

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

SDGs: Affordable and clean energy, Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W4414909295

FWCI: 2.591

Cites: 20

Cited by: 1

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