Work

A High-speed Dynamic Gate Driver with Low Oscillation for GaN HEMTs

Year: 2025

Type: conference-paper

Source: IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)

DOI: 10.1109/wipda-asia63772.2025.11184039

Authors: Xuetong Zhou, Li Zheng, Xinhong Cheng, Lingyan Shen

Institutions: Chinese Academy of Sciences, Shanghai Institute of Microsystem and Information Technology

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Science and Technology Commission of Shanghai Municipality, National Key Research and Development Program of China, Youth Innovation Promotion Association

OpenAlex ID: W4414909297

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Cites: 7

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