Work

Dynamic Model of Non-Segmented SiC MOSFETs Considering Switching Behavior and Temperature Effects

Year: 2025

Type: conference-paper

Source: IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)

DOI: 10.1109/wipda-asia63772.2025.11184079

Authors: Wenzheng Dou, Xin Lan, Ning Zhao

Institution: Shandong University

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

OpenAlex ID: W4414909299

FWCI:

Cites: 8

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