Work

Investigation of Electrical Property and Reliability in AlGaN/GaN MIS-HEMTs Fabricated by Using N 2 /O 2 Composite Plasma Treatment

Year: 2025

Type: conference-paper

Source: IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)

DOI: 10.1109/wipda-asia63772.2025.11184054

Authors: Qingyuan Zuo, Huolin Huang, Yun Lei, Jiayu Zhang, Jianyu Zhao, Jianxun Dai

Institution: Dalian University of Technology

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4414909304

FWCI: 2.591

Cites: 22

Cited by: 1

Related to: