Work

Analysis of Planar and SBD-Embedded SiC MOSFET Under Avalanche Stress

Year: 2025

Type: conference-paper

Source: IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)

DOI: 10.1109/wipda-asia63772.2025.11183854

Authors: Hao Huang, Yuting Jin, Dong Hai, Dingyuan Bao, Taohui Zhang, Haoze Luo, Francesco Iannuzzo, Wuhua Li

Institutions: Zhejiang University, Politecnico di Torino

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Research and Development

OpenAlex ID: W4414909316

FWCI:

Cites: 10

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