Work

Reliability Analysis for 1200V SiC MOSFETs under Repetitive Surge Current Operation with Negative Gate-source Bias

Year: 2025

Type: conference-paper

Source: IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)

DOI: 10.1109/wipda-asia63772.2025.11184013

Authors: Xinbin Zhan, Yanjing He, Jiankun Lai, Xi Jiang, Song Yuan, Hao Yuan, Qingwen Song, Xiaoyan Tang, Xiaowu Gong, Yuming Zhang

Institutions: Xidian University, Guangzhou Institute of Technology

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4414909319

FWCI: 2.3

Cites: 10

Cited by: 1

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