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High‐Performance and Scalable Ferroelectric Diodes Enabled via 2D‐MoS 2 Buffer Layer Under Low Thermal Budget

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Year: 2025
Type: article
Source: Small
DOI: 10.1002/smll.202508853
Authors: Seungkwon Hwang, Kyumin Lee, Laeyong Jung, Hojung Jang, Byeongjin Park, Seock‐Jin Jeong, Jongwon Yoon, Jung‐Dae Kwon, Yonghun Kim, Hyunsang Hwang
Institutions: Pohang University of Science and Technology, Korea Institute of Materials Science
Language: English

Topic: Ferroelectric and Negative Capacitance Devices
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences

Open Access status: closed

Funders: National Research Foundation of Korea, National Research Council of Science and Technology
Awards: G1143725405, G6110638645, G6173682280
OpenAlex ID: W4414915570
FWCI: 0.46
Cites: 54
Cited by: 2
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