Silicon Oxycarbide Coatings Produced by Remote Hydrogen Plasma CVD Process from Cyclic Tetramethylcyclotetrasiloxane
Year: 2025
Type: article
Abstract: The development of high-speed computers and electronic memories, high-frequency communication networks, electroluminescent and photovoltaic devices, flexible displays, and more requires new materials with unique properties, such as a low dielectric constant, an adjustable refractive index, high hardness, thermal resistance, and processability. SiOC coatings possess a number of desirable properties required by modern technologies, including good heat and UV resistance, transparency, high electrical insulation, flexibility, and solubility in commonly used organic solvents. Chemical vapor deposition (CVD) is a very useful and convenient method to produce this type of layer. In this article we present the results of studies on SiOC coatings obtained from tetramethylcyclotetrasiloxane in a remote hydrogen plasma CVD process. The elemental composition (XPS, EDS) and chemical structure (FTIR and NMR spectroscopy-13C, 29Si) of the obtained coatings were investigated. Photoluminescence analyses and ellipsometric and thermogravimetric measurements were also performed. The surface morphology was characterized using AFM and SEM. The obtained results allowed us to propose a mechanism for the initiation and growth of the SiOC layer.
Source: Coatings
Authors: Agnieszka Walkiewicz-Pietrzykowska, Krzysztof Jankowski, Romuald Brzozowski, Joanna Zakrzewska, Paweł Uznański
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $3,137
OpenAlex ID: W4414935739