Work

Influence of the GaAs substrate thickness on the photoluminescence of an InP/AlGaInP quantum dot membrane

Year: 2025

Type: article

Abstract: Modern semiconductor device technology expands to new application fields and increasing integrability even to hybrid system approaches. Thus, membrane technologies emerge to be a new standard for light-emitting devices as well. However, the fabrication of membranes often results in a shift of the emission wavelength of the active region compared to the as-deposited structure, especially when containing quantum dots (QDs). In this study, we investigate the wavelength shift of an AlGaInP heterostructure with InP QDs during the GaAs substrate removal step. For this, the substrate of a fivefold InP QD layer is selectively etched in such a way that a single sample provides areas with different remaining substrate thicknesses in a range within 1 μm. With photoluminescence measurements, a continuous blueshift of the emission spectrum of the QD ensemble can be observed. We explain these findings by the change of the strain within the entire structure, which impacts the confinement energies within the QDs.

Source: Journal of Applied Physics

DOI: 10.1063/5.0289769

Authors: A. Ćutuk, M. Jetter, P. Michler

Institutions: University of Stuttgart, Center for Integrated Quantum Science and Technology

Language: English

Topic: Semiconductor Quantum Structures and Devices

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: hybrid

Estimated APC paid: $3,500

Funder: Deutsche Forschungsgemeinschaft