Year: 2025
Type: article
Abstract: Perovskite materials have garnered significant attention in both fundamental research and practical applications owing to their exceptional light absorption coefficients, low fabrication costs, and inherent advantages for thin-film and flexible device fabrication. Nevertheless, interface defects within perovskite films induce detrimental non-radiative carrier recombination and pronounced hysteresis effects, which collectively impose substantial limitations on the photovoltaic performance and long-term operational stability of perovskite solar cells (PSCs). Conventional passivation strategies, despite their demonstrated efficacy in mitigating interface defects, often inadvertently introduce secondary defects in originally defect-free regions, thereby restricting the extent of device performance improvement. To overcome this critical limitation, we have developed a precision defect passivation methodology that employs a targeted two-step immersion–cleaning process, achieving selective defect passivation while concomitantly eliminating residual passivating agents. This approach effectively prevents the formation of new defects in unaffected regions of the perovskite films, and the resultant PSC possesses a power conversion efficiency (PCE) of 21.08%, accompanied by a substantial mitigation of hysteresis behavior. Furthermore, unencapsulated devices demonstrate remarkable stability, retaining over 81% of their initial efficiency after 20 days of atmospheric storage under 50% relative humidity, which underscores the effectiveness of our passivation strategy in simultaneously enhancing both device performance and operational stability.
Source: Crystals
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $2,534
OpenAlex ID: W4414966176