Work

Research on Voltage Oscillation Suppression of SiC MOSFETs Based on Gate‐Notch Filter and PCB Optimization

Year: 2025

Type: article

Source: International Journal of Circuit Theory and Applications

DOI: 10.1002/cta.70174

Authors: Jiajia Li, Changzhou Yu, Haizhen Xu, Jinfang Liu, Yifei Wang, Junhua Dong, Shaolin Yu

Institutions: Hefei University, Institute of Energy, Hefei Comprehensive National Science Center

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W4414967511

FWCI: 0.227

Cites: 33

Cited by: 1

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