Year: 2025
Type: article
Abstract: Infrared HgSe quantum dots (QDs) enable mid-infrared and longer-wavelength infrared detection through intraband absorption, thereby expanding the selection range of traditional infrared detector materials, which holds promise for overcoming the challenges of complex fabrication processes and high costs. However, control of the size and distribution of HgSe QDs is a key factor limiting the performance enhancement of infrared detectors. Here, the reaction temperatures, growth periods, and reactant stoichiometries of the precursors were systematically regulated to achieve high-quality HgSe QDs with sizes ranging from 2.42 nm to 7.54 nm and excellent monodispersity. Further ligand exchange and film formation tests indicate that this HgSe QD film exhibits excellent flatness. Consequently, the high-quality mid-infrared HgSe QDs reported here are anticipated to facilitate subsequent advancements in associated domains.
Source: Crystals
Authors: Shuaipu Zang, Lingshi Wang, Kun Zhang, Jiaojiao Song, Lei Wang, Lin-Song Li
Institutions: Zhongyuan University of Technology, Henan University
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $2,534
Awards: G2620029743, G2772685646
OpenAlex ID: W4414968581