Work

Mitigation of Interface Trap-Induced Bump Effects in p-Type MOS Capacitor

Year: 2025

Type: conference-paper

Source: HAL (Le Centre pour la Communication Scientifique Directe)

Authors: Eleuterio, Francisco, Lévêque, Jean, Raël, Stéphane, Nguyen, Ngoc Duy, Vanderheyden, Benoit

Institutions: University of Liège, Groupe de Recherche en Énergie Électrique de Nancy

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4414969715

FWCI:

Cites:

Cited by:

Related to: