Work

Strongly thermochromic W-doped VO2 films with a large temperature coefficient of electrical resistance near room temperature

Year: 2025
Type: article
Abstract: We report the crystal structure, surface morphology, electronic band structure, optical and electrical properties, and semiconductor-metal transition characteristics of strongly thermochromic W-doped VO2 films with a large (up to -16% K-1) temperature coefficient of electrical resistance at a small hysteresis width of electrical resistivity (down to 3 °C) near room temperature, and with a wide temperature operation range at a high detection sensitivity (≥ 8% K-1) and low values of the electrical resistivity. They were deposited at a reduced substrate temperature of 350 °C onto soda-lime glass (SLG) with two versions of yttria-stabilized zirconia (YSZ) interlayers possessing different cubic crystal orientations, and onto bare SLG and monocrystalline YSZ and Al2O3 substrates for comparison. The W-doped VO2 depositions were performed using reactive deep oscillation magnetron sputtering with a feedback pulsed O2 flow control allowing us to increase deposition rate of films up to 20-30 nm min-1 for a target-substrate distance of 100 mm. The results are important for a further improvement of thermochromic performance of VO2-based coatings for energy-saving smart windows and for a new design of high-performance infrared detectors and temperature sensors prepared by a fast low-temperature scalable synthesis.
Language: English
Open Access status: gold
Estimated APC paid: $2,350
OpenAlex ID: W4414980648
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Cites: 41
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