Work

Improved ESDFET Compact Model Incorporating Transient, Temperature, and Body Bias Effects

Year: 2025

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2025.3617040

Authors: Anant Singhal, Garima Gill, Girish Pahwa, Harshit Agarwal

Institutions: Indian Institute of Technology Jodhpur, National Yang Ming Chiao Tung University

Language: English

Topic: Electrostatic Discharge in Electronics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Department of Science and Technology, Ministry of Science and Technology, India

OpenAlex ID: W4414988657

FWCI:

Cites: 19

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