Work

Ultrasteep Subthreshold Slope Metal-Drain Dual-Type (p/n) Silicon Transistors: Characterization, Analysis, and Application

Year: 2025

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2025.3612318

Authors: Zhibo Chen, Baowei Yuan, Haobo Huang, Weiao Chen, Biyu Guo, Chengjie Tang, Yingxin Chen, Weizhuo Gan, Chunsong Zhao, Zhaozhao Hou, Qiang Zhang, Jiachen Gao, Jiale Wang, Jeffrey Xu, Guangxi Hu, Jing Wan, Ye Lu

Institutions: Fudan University, Huawei Technologies (China)

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, E-Institutes of Shanghai Municipal Education Commission

Awards: G1312300177, G1687393570, G2805775771, G4136069096

OpenAlex ID: W4414988682

FWCI:

Cites: 37

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