Work

Simulation model of an enhanced design with high-efficiency, low dark current 1550 nm GeSn/SiGeSn QWPD based on a charge barrier and Bragg reflector

Year: 2025

Type: article

Source: Applied Optics

DOI: 10.1364/ao.573619

Authors: Islam Arafa, Hassan Mostafa, Yasmine Elogail

Language: English

Topic: Advanced Semiconductor Detectors and Materials

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Science and Technology Development Fund

Award: G8013687019

OpenAlex ID: W4414993447

FWCI: 0.231

Cites: 24

Cited by: 1

Related to: