Work

Rectangular Cavity-Induced Photoluminescence Enhancement in InGaN/GaN Nanowire Mesh: A Combination of Frequency Selectivity, Carrier Confinement, and Higher Active Volume

Year: 2025

Type: article

Source: ACS Applied Electronic Materials

DOI: 10.1021/acsaelm.5c01556

Authors: Navneet Thakur, Dipanwita Aich, Kanchan Singh Rana, Swaroop Ganguly, Dipankar Saha

Institution: Indian Institute of Technology Bombay

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: Department of Science and Technology, Ministry of Science and Technology, India, Ministry of Electronics and Information technology, Science and Engineering Research Board

OpenAlex ID: W4415017930

FWCI: 0.646

Cites: 27

Cited by: 2

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