Monte Carlo analysis of hot electron injection in the passivation layer of GaN HEMTs
Year: 2025
Type: article
Abstract: We investigate the injection of hot electrons in the passivation layer above the drift region of GaN HEMTs by means of Monte-Carlo transport simulations. We find that the lateral component of the electric field in the AlGaN layer delivers a non-negligible kinetic energy to the electrons, thus enhancing injection in the passivation at the top, an effect that is not captured by the standard hot-carrier injection models developed for Si devices that requires the development of ad-hoc hot-carrier injection models for GaN devices. The implications of our calculations for the understanding of reliability and dynamic- R o n are also briefly discussed. • Monte Carlo simulations of hot-electrons in the drift region of GaN HEMTs for power applications. • Increasing the AlGaN thickness reduces hot electron injection but causes additional electron heating. • Passivation engineering is a more efficient strategy to contain hot-electron effects than just increasing the barrier thickness.
Source: Solid-State Electronics
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $2,410
OpenAlex ID: W4415020283