Year: 2025
Type: preprint
Abstract: Despite the parallel in-memory search capabilities of content addressable memories (CAMs), their use in applications is constrained by their limited resolution that worsens as they are scaled to larger arrays or advanced nodes. In this work we present experimental results for a novel back-end-of-line compatible reference resistive device that can significantly improve the search resolution of CAMs implemented with CMOS and beyond-CMOS technologies to less than or equal to 5-bits.
Source: arXiv (Cornell University)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W4415031067
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