Work

Investigation of Gate Driving Condition on p-GaN HEMTs under Single Event Short Circuit Type I

Year: 2025

Type: conference-paper

Authors: Gengqi Li, Maximilian Goller, Josef Lutz, Thomas Basler

Institution: Chemnitz University of Technology

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4415034737

FWCI: 2.358

Cites: 15

Cited by: 1

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