Work

Performance Evaluation of GaN-Based HEMTs with Cu Trap Layer Using Multi-Stacked AlGaN Barriers

Year: 2025

Type: conference-paper

DOI: 10.1109/netact65906.2025.11188083

Authors: P Harikrishnan, B Mohan, R Vijay Prakash, G Gifty, J Relin Francis Raj, N Kanthimathi, S Mahalakshmi

Institutions: Kalasalingam Academy of Research and Education, Social Change and Development, Saveetha University, Bannari Amman Institute of Technology

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4415034827

FWCI: 2.524

Cites: 20

Cited by: 1

Related to: