Accumulation-mode SiC Trench MOSFET
Year: 2025
Type: conference-paper
Abstract: Due to their deficient gate oxide quality, low electron mobility (μn) values in silicon-carbide (4H-SiC) MOSFETs have been reported so far. Therefore, in addition to efforts to directly improve this, alternative FETs have been proposed that offer higher μn. Examples are the SiC trench MOSFET, where current flows vertically along a different crystal surface, and the (lateral) SiC accumulation-mode FET (AccuFET). In this work an alternative device is studied, i.e. the SiC trench AccuFET. The main advantage compared to reported counterparts is that this vertical structure does not require a p-type layer in the channel which will increase μn, and thus offers a low specific on-resistance (Ron.sp). After careful calibration of both μnand the impactionization (II) coefficients obtained from reported experimental data, extensive TCAD simulations have been performed. The results show low Ron,sp’s ranging from 0.56 to 2.09 mQ•cm2for breakdown voltages (BVs) ranging from 1.5kV to 2.5kV. In addition, e-mode behavior and low reverse leakage current densities (Irev/A ≈ 10−9A/cm2) for temperatures up to T=425K have been obtained.
Institution: University of Twente
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W4415034829
FWCI:
Cites:
Cited by:
Related to: