Work

Lateral Semiconductor–Free-Space Gate Transistors

Year: 2025

Type: article

Abstract: High Resolution Image Download MS PowerPoint Slide We introduce a novel lateral transistor architecture, the semiconductor–free-space gate transistor (SFGT), in which the conventional solid dielectric is replaced by a semiconductor–free-space gate configuration with sub-100 nm fin channels and dual side gates. This work presents the first demonstration of free-space gating in wide and ultrawide bandgap semiconductors, achieving performance on par with oxide-gated transistors. SFGTs fabricated using β-Ga 2 O 3 exhibit subthreshold slopes below 200 mV/dec, high drain current exceeding 250 mA/mm, hysteresis under 230 mV, I ON /I OFF ratios above 10 6, and breakdown voltages over 500 V. The absence of a solid dielectric layer, combined with the open gate geometry, enables direct access to the gate region for external electric field modulation and threshold voltage tuning, while mitigating the detrimental effects of charges and trap states in conventional dielectrics. These results show the potential of SFGTs for future memory, sensing, and power applications.

Source: Nano Letters

DOI: 10.1021/acs.nanolett.5c03880

Authors: Glen Isaac Maciel García, Vishal Khandelwal, Ganesh Mainali, Víctor Dorantes Paulín, Biplab Sarkar, Xiaohang Li

Institutions: King Abdullah University of Science and Technology, Indian Institute of Technology Roorkee

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: hybrid

Estimated APC paid: $4,500

Funders: King Abdullah University of Science and Technology, Division of Mathematical Sciences