Work

Temperature-dependent analysis of SiC SJ-TG-IGBT with split collector for reduced losses and high breakdown voltage

Year: 2025

Type: article

Source: International Journal of Modern Physics B

DOI: 10.1142/s0217979225502583

Authors: Satish Kumar Sahu, Saji. T. Chacko, Onika Parmar, Amit Singh Rajput

Institutions: Chhattisgarh Swami Vivekanand Technical University, Rungta College of Engineering and Technology

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDGs: Affordable and clean energy, Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W4415101501

FWCI: 0.231

Cites: 30

Cited by: 1

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