Graphene Heterostructure-Based Non-Volatile Memory Devices with Top Floating Gate Programming
Year: 2025
Type: article
Abstract: High Resolution Image Download MS PowerPoint Slide We present a graphene-based memory platform built on dual-gated field-effect transistors (GFETs). By integrating a lithographically defined metal patch directly atop the hexagonal boron nitride (hBN)-graphene channel, the device functions simultaneously as a top gate, floating gate (FG) reservoir, and active reset contact. This architecture forms an ultrathin van der Waals heterostructure with strong capacitive coupling to the back-gate, confirmed by a dynamic model, enabling a tunable and wide memory window that scales with back-gate voltage and is further enhanced by reducing hBN thickness or increasing FG area. Our devices demonstrate reversible, high-efficiency (>90%) charge programming, robust nonvolatile behavior across 10–300 K and a wide range of operation speeds, and endurance beyond 9800 cycles. Importantly, a grounded top electrode provides on-demand charge erasure, offering functionality that is absent in standard FG designs. These results position hBN/graphene-based GFETs as a compact, energy-efficient platform for next-generation 2D flash memory, with implications for multilevel memory schemes and cryogenic electronics.
Source: ACS Applied Electronic Materials
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $4,500
Funders: Ministry of Education, Culture, Sports, Science and Technology, Fundação de Amparo à Pesquisa do Estado de São Paulo, Coordenação de Aperfeiçoamento de Pessoal de Nível Superior, Ministério da Ciência, Tecnologia e Inovação, Conselho Nacional de Desenvolvimento Científico e Tecnológico, Universidade Estadual de Campinas, Centro Nacional de Pesquisa em Energia e Materiais, Japan Society for the Promotion of Science, National Institute for Materials Science, Laboratório Nacional de Luz Síncrotron, Laboratório Nacional de Nanotecnologia, Centros de Pesquisa, Inovação e Difusão, Fundação Amazônia Paraense de Amparo à Pesquisa, Core Research for Evolutional Science and Technology
Awards: G1233342666, G1565398097, G1679338169, Multiuser equipment (EMU) granted in the project 2021/06238-5: Keihtley 4200A semiconductor characterization system, G2114389713, G22113365, G295657101, G3690646728, G3751427299, G4091144171, G4626568898, G4806815962, G536828812, Research Center of Molecular Engineering for Advanced Materials (CEMol), G7737877840, EMU: multiuser infrastructure dedicated to nanofabrication and characterization of nanodevices at LNNano/CNPEM, G8282530889, G8876680065, G898758523
OpenAlex ID: W4415102228