Work

Molecular beam epitaxy of In-assisted ScAlN/GaN HEMT structures with ultralow sheet resistance

Year: 2025

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0283382

Authors: Liuyun Yang, Haotian Ye, Jinlin Wang, Ding Wang, Bingxuan An, Tao Wang, Rui Wang, Fang Liu, Bowen Sheng, Weikun Ge, Ping Wang, Xinqiang Wang

Institutions: Peking University, Songshan Lake Materials Laboratory, Collaborative Innovation Center of Quantum Matter

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Beijing Municipal Natural Science Foundation, National Key Research and Development Program of China

Awards: G3474489459, G3991704610, G4474825276, G5188666603, G5923968547, G951567209

OpenAlex ID: W4415105407

FWCI: 0.31

Cites: 44

Cited by: 1

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