Work

ALD-Driven Ultra-Thin ZnO Channels for Flexible Electrolytic Neuromorphic Devices

Year: 2025

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2025.3620327

Authors: Huanhuan Wei, Jiawei Yang, Can Fu, Zhenhai Li, Yao Ni, Bingyan Wang, Bo He, Shanshan Jiang, Gang He

Institutions: Anhui University, Guangdong University of Technology

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, China Postdoctoral Science Foundation, Natural Science Foundation of Anhui Province, Basic and Applied Basic Research Foundation of Guangdong Province

Awards: G1513659146, G3329910227, G3524760486, G4128749460, G4749819762, G5145469494, G539474978, 高k栅介质/金属栅锑化镓MOS器件中的关键物理问题研究

OpenAlex ID: W4415124203

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Cites: 26

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