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Single-Event Effects in 1.2 kV Normally-On SiC JFETs Under Heavy-Ion Strike

Year: 2025

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2025.3616282

Authors: Lihao Wang, Xintian Zhou, Xingyu Fang, Liang Wang, Yuanfu Zhao

Institutions: Peking University, Beijing Microelectronics Technology Institute, Beijing University of Technology

Language: English

Topic: Radiation Effects in Electronics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Award: G5604247328

OpenAlex ID: W4415124503

FWCI:

Cites: 29

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