Year: 2025
Type: article
Abstract: 4H-SiC wafers usually require polishing treatment after slicing to improve the surface quality. However, traditional polishing processes have problems such as low removal efficiency and easy surface damage, which affect the reliability of electronic devices. In this paper, picosecond laser polishing technology is used to study the 4H-SiC wafers after slicing. Numerical models of single-pulse ablation and moving heat source polishing were established to reveal the interaction mechanism between laser and material, including the dynamic evolution of free electron density and the remarkable spatiotemporal non-equilibrium heat transfer characteristics of the electron-lattice system. The sliced 4H-SiC surface with a roughness of 2265 nm was polished by a 1064 nm picosecond laser, and the influence of laser power and scanning speed on the surface quality was systematically studied. By collaboratively optimizing the polishing power and speed, the surface roughness of the sample can be significantly reduced to 207.33 nm (a decrease of 90.85%). The research results indicate that an ultrafast laser is suitable for the pretreatment process of sliced silicon carbide wafers, laying a foundation for further research in the future. This research has a certain research significance for promoting the development of ultrafast laser polishing technology for single crystal silicon carbide wafers and improving the performance and reliability of semiconductor devices.
Source: Micromachines
DOI: 10.3390/mi16101163
Authors: Yixiong Yan, Yuxuan Cheng, Sijia Chen, Yu Tang, Fan Zhang, Piaopiao Gao
Language: English
Subfield: Computational Mechanics
Field: Engineering
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $2,534
OpenAlex ID: W4415145565