Growth and characterization of high-quality h-BN single-layer films on Si-incorporated Ni (111) via molecular beam epitaxy
Year: 2025
Type: article
Source: Applied Physics Letters
DOI: 10.1063/5.0284316
Institution: University of California, Riverside
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: closed
Funder: National Science Foundation
OpenAlex ID: W4415153268
