Self-aligned implanted mesa termination enables a high BFOM of 1.64 GW/cm2 and non-edge junction breakdown for vertical GaN SBDs
Year: 2025
Type: article
Source: Applied Physics Letters
DOI: 10.1063/5.0282412
Authors: Xinchen Ge, Haoran Qie, Xiaolu Guo, Yaozong Zhong, Xin Chen, Hongwei Gao, Yu Zhou, Qian Li, Qian Sun, Hui Yang
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
Funders: National Natural Science Foundation of China, Youth Innovation Promotion Association of the Chinese Academy of Sciences, Jiangsu Provincial Key Research and Development Program, Basic Research Program of Jiangsu Province, National Key Research and Development Program of China, Science and Technology Program of Suzhou, Basic and Applied Basic Research Foundation of Guangdong Province
Awards: G1024630885, G1058890890, G2130918107, G2799326589, G3016912322, G3062167090, G3187034851, G3265339480, G369126902, G4332241254, G4796349636, G4929730729, G5315979992, G5739167345, G5995982716, G7170443365, G7241895887, G7243388396, G7587936312, G7732113429, G7811516780, G7873261117, G7915031597, G8651122748, G8730630127, G8950210697
OpenAlex ID: W4415153534