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Mechanism of Gamma-Ray Irradiation Effects on the Transient Characteristics of Photoconductive Semiconductor Switches

Year: 2025

Type: article

Source: IEEE Transactions on Nuclear Science

DOI: 10.1109/tns.2025.3621252

Authors: Yongheng Luo, Dan Zhang, Lin Wen, Jiyang Shang, Tao Yuan, Bin Wang, Dong Zhou, Qi Guo, Yudong Li

Institutions: Chinese Academy of Sciences, Xinjiang Technical Institute of Physics & Chemistry

Language: English

Topic: Radiation Effects in Electronics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Youth Innovation Promotion Association of the Chinese Academy of Sciences

Award: G7971815979

OpenAlex ID: W4415159151

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Cites: 35

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