Work

Trap-Induced Leakage Current Increase in β -Ga 2 O 3 Schottky Barrier Diodes Under 473-MeV Kr Ion Irradiation

Year: 2025

Type: article

Source: IEEE Transactions on Nuclear Science

DOI: 10.1109/tns.2025.3620821

Authors: Zhengliang Zhang, Xinao Lin, Tianqi Wang, Chaoming Liu, Jianli Liu, Lei Shu, Yi Sun, Mingxue Huo, Liyi Xiao

Institutions: Harbin Institute of Technology, Chinese Academy of Sciences, Institute of Microelectronics, China Academy of Space Technology

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Awards: G1020231493, G1693754126, G3464628322

OpenAlex ID: W4415159167

FWCI: 0.64

Cites: 37

Cited by: 4

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