Work

Transformation of n-type FeSxOy semiconductor to p-type by sulfur annealing in vacuum and air for homostructure solar cell applications

Year: 2025

Type: article

Abstract: The effects of sulfur annealing temperature (300–600 °C) in vacuum (V) and air (A) conditions for 1 h on the properties of n-type iron-sulfide-oxide (FeS x O y : as-deposited) film were studied. Increasing the annealing temperature for both conditions resulted in larger agglomerations of the grain/particle consisting of various sizes, increased film resistance, and lowered the bandgap due to oxygen reduction. The transformation of n-type to p-type occurred at an annealing temperature > 400 °C, and pure marcasite (FeS 2 ) appeared in Raman spectra for the films annealed in air at 500 °C. The average efficiency of the FeS x O y homostructure solar cell containing 50 mM tartaric acid (0.57%) is slightly higher than that of 100 mM lactic acid (0.39%). The low efficiency of our fabricated solar cells was primarily due to the high resistance of the p-type film, which partly hindered the free motion of carrier charges.

Source: Applied Physics A

DOI: 10.1007/s00339-025-09004-w

Authors: Adrian Afzal Ariff, Aizuddin Supee, Mohd Zamri Mohd Yusop, Mohd Akhmal Muhamad Sidek

Institution: University of Technology Malaysia

Language: English

Topic: Chalcogenide Semiconductor Thin Films

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: hybrid

Estimated APC paid: $3,790