Integration of μLED and GaN 2T1C Circuit Based on Hydrogen-Treated p -GaN Technology
Year: 2025
Type: article
Source: IEEE Electron Device Letters
Authors: Jinxia Jiang, Ang Li, Guohao Yu, Qing Li, Han Yue, Yong Cai, Yiqun Wang, Zhongming Zeng, Baoshun Zhang
Institution: University of Science and Technology of China
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
Awards: G1254522351, G6440490460
OpenAlex ID: W4415179130