Work

Preparation, Characterization, and Simulation Prediction of MoS 2 Transistors

Year: 2025

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2025.3617478

Authors: Kaige Yang, Qiang Gao, Xiaojing Su, Yajuan Su, Xuge Fan, Jie Ding

Institutions: Beijing Institute of Technology, Chinese Academy of Sciences, Institute of Microelectronics

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funder: Beijing Institute of Technology Research Fund Program for Young Scholars

OpenAlex ID: W4415179850

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Cites: 33

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