Year: 2025
Type: preprint
Abstract: We report a study of the spin-to-charge current conversion in compressively strained Ge1-xSnx alloy epilayers as a function of the Sn concentration by means of the inverse spin Hall effect (ISHE). The spin current is generated by spin-pumping effect (SPE) from a thin NiFe layer driven into ferromagnetic resonance (FMR). By simultaneously measuring the magnetic damping of the NiFe layer and the ISHE-induced charge current we extract two key spintronics parameters: the spin Hall angle and the effective spin mixing conductance. Our results reveal a giant spin-to-charge conversion and a non-monotonic dependence of the charge current signal on the Sn concentration, consistent with the variation in the magnetic damping observed in FMR. The values of spin Hall angle are comparable to those reported for heavy metals such as Pt and Ta. Furthermore, we show that the spin conductivity at the Au/GeSn interface can be enhanced by tuning the Sn concentration.
Source: arXiv (Cornell University)
Institutions: Universidad de Santiago de Chile, Center for the Development of Nanoscience and Nanotechnology, Pontificia Universidad Católica de Chile, University of Warwick, Centre National de la Recherche Scientifique, Commissariat à l'Énergie Atomique et aux Énergies Alternatives, CEA Grenoble, Spintronique et Technologie des Composants, University of Milano-Bicocca
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: green
Awards: MAGNETO-OPTICAL DETECTION OF SPIN-ORBIT TORQUES INDUCED BY INTERFACE-GENERATED SPIN CURRENTS, G2345402974, ADQUISICION DE UN EQUIPO DE RESONANCIA PARAMAGNETICA ELECTRONICA PARA EL FORTALECIMIENTO DE LINEAS DE INVESTIGACION EN LAS FACULTADES DE FISICA Y QUIMICA Y DEL DEPARTAMENTO DE NUTRICION DE LA FACULTAD DE MEDICINA DE LA PONTIFICIA UNIVERSIDAD CATOLICA, SPIN CURRENTS IN MAGNETIC NANOSTRUCTURES, IMPLEMENTACION DE UN SISTEMA DE GRABADO IONICO REACTIVO PARA EL DESARROLLO DE CAPACIDADES TECNOLOGICAS EN MICRO- Y NANO-FABRICACION, G6321809664, SISTEMA DE FABRICACION Y ANALISIS DE NANOMATERIALES (NANOSIF), G8160215335, CENTRO PARA EL DESARROLLO DE LA NANOCIENCIA Y LA NANOTECNOLOGIA, APOYO BASAL 2023 CCTVAL
OpenAlex ID: W4415199835
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