Work

Analytical models of 3D electric field and specific ON-resistance for a novel split-gate trench VDMOS

Year: 2025

Type: article

Source: Semiconductor Science and Technology

DOI: 10.1088/1361-6641/ae0825

Authors: Gaoqiang Deng, Jianghuan Li, Renkuan Liu, Zhuoling Dong, Tao Yang, Song Ye, Jun Ye, Wenying Ma, Jie Wei, Bo Zhang, Xiaorong Luo

Institutions: University of Electronic Science and Technology of China, Chengdu University of Information Technology

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Fundamental Research Funds for the Central Universities

Awards: G3738392456, G8630279440

OpenAlex ID: W4415212798

FWCI: 0.227

Cites: 24

Cited by: 1

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