Structural and Optoelectronic Parameters of a Cobalt-Doped Molybdenum Disulfide Diode-Based Photodetector
Year: 2025
Type: article
Abstract: High Resolution Image Download MS PowerPoint Slide This study investigated the structural, electrical, and optical properties of MoS 2 and Co-doped MoS 2 nanosheets, focusing on their potential applications in optoelectronics. High-resolution transmission electron microscopy (HRTEM), X-ray diffraction (XRD), current–voltage ( I – V ), and ultraviolet-visible (UV–vis) spectroscopy were used to examine the materials. Results indicate that Co-doping enhances the active sites for more light absorption, reduces the bandgap, and improves photoconductivity. The diode characteristics from I – V measurements were also analyzed. The I – V showed typical diode-like rectification behavior with great improvement in key parameters like the ideality factor ( n ), saturation current ( I s ), and junction resistance ( R j ) of the Co-doped device. The photodetector based on the Co-doped device exhibited superior photocurrent ( I photo ) generation, responsivity ( R ), and detectivity ( D *) compared to the MoS 2 device, indicating its enhanced photodetection performance. These results show that Co-doping significantly improves the efficiency of photon-to-electron conversion, making the MoS 2 -Co device much more efficient in harvesting light energy.
Source: ACS Omega
Authors: James A. Oke, Tien-Chien Jen
Institution: University of Johannesburg
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $1,935
Funder: University of Johannesburg
OpenAlex ID: W4415215544