Work

Surface treatments affect GaN surface quantum well emission

Year: 2025

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0274628

Authors: B. J. Sekely, C. T. Kuhs, H. Xue, J. J. Wierer, H. O. Everitt, J. F. Muth

Institutions: North Carolina State University, DEVCOM Army Research Laboratory, United States Army Combat Capabilities Development Command, Rice University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Science Foundation, U.S. Department of Energy

Awards: NNCI: North Carolina Research Triangle Nanotechnology Network (RTNN), G42916606, NNCI: North Carolina Research Triangle Nanotechnology Network (RTNN)

OpenAlex ID: W4415229341

FWCI: 0.323

Cites: 18

Cited by: 1

Related to: